MP4T6310 Datasheet | M-pulse Microwave

Features - - - - - High Performance at VCE = 3V Low Noise Figure at Small Currents (0.3-2 m A) High Gain (14 d B) at 1m A Collector Current High f T (14 GHz) Available on Tape and Reel MP4T6310 Series SOT-23 Description The MP4T6310 series of low current, high f T silicon NPN bipolar transistors provides low noise figure at a bias of 3 volts and small collector current. These inexpensive surface mount NPN transistors are well suited for usage in protable battery operated wireless systems from 500 MHz through 2.5 GHz where low noise figure at small current is important. The MP4T6310 transistors series has high f T and low noise when operated with 0.3 to 2.0 milliamperes current, and 3 volt bias. The associated gain is approximately 14 d B at 1 GHz with 1 m A collector current. The MP4T6310 also has low phase noise while operating in a low power 3-5 volt battery operated VCO in the frequency range of 0.5 to 3 GHz. The MP4T6310 transistor is designed for wireless munication systems from VHF through L-band where good noise figure and high gain at 3 volt bias and low DC current are key system requirements. Suggested uses .. include, 900 MHz portable phones, pagers, PCN subscriber phones and 2.4 GHz cordless and cellular hand held receivers. The MP4T6310 family of transistors is available in chip (MP4T631000), SOT-23 (MP4T631033), SOT-143 (MP4T631039), and in Micro-X (MP4T631035) packages. Surface mount packages are available on tape and reel. SOT-143 Chip Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 1 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, Low Noise High f T Silicon Transistor Electrical Specifications at 25°C Symbol f T |S21E| MP4T6310 Series Parameters Gain Bandwidth Product Insertion Power Gain Noise Figure GTU (max) Unilateral Gain MAG P1d B RTH (J-A) Maximum Available Gain Power Out at 1d B pression...